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In page PIN diode:
"When the diode is forward biased, the injected carrier concentration is typically several orders of magnitude higher than the intrinsic carrier concentration. Due to this high level injection, which in turn is due to the depletion process, the electric field extends deeply (almost the entire length) into the region. This electric field helps in speeding up of the transport of charge carriers from the P to the N region, which results in faster operation of the diode, making it a suitable device for high-frequency operation.[citation needed]
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